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| MITSUBISHI IGBT MODULES CM600HU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM600HU-12H IC ................................................................... 600A VCES .......................................................... 600V Insulated Type 1-element in a pack UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 930.25 13.5 26 29 20.5 4-6.5MOUNTING HOLES 8.5 12.55 10 9.5 19.1 62 480.25 17.2 6.5 G E 6.5 8.5 E 21.15 C CM 2-M4NUTS 18 TC measured point 2-M8NUTS 4 24.35 E 34+1 -0.5 +1 26 -0.5 E G CIRCUIT DIAGRAM C LABEL Feb. 2009 1 MITSUBISHI IGBT MODULES CM600HU-12H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso -- -- (Tj = 25C, unless otherwise specified) Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight VGE = 0V VCE = 0V TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 600 20 600 1200 600 1200 1560 -40 ~ +150 -40 ~ +125 2500 9.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 450 Unit V V A A A A W C C Vrms N*m N*m N*m g (Note 1) (Note 1) -- -- Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw Auxiliary terminals M4 screw Typical value ELECTRICAL CHARACTERISTICS Symbol ICES Item (Tj = 25C, unless otherwise specified) Test Conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V VGE = VGES, VCE = 0V IC = 600A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 600A, VGE = 15V VCC = 300V, IC = 600A VGE = 15V RG = 1.0 Resistive load IE = 600A, VGE = 0V IE = 600A, die / dt = -1200A / s Junction to case, IGBT part Junction to case, FWDi part Case to heat sink, conductive grease applied (Note 6) (Note 4) Tj = 25C Tj = 125C Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time VEC(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6 -- 2.4 2.6 -- -- -- 1200 -- -- -- -- -- -- 1.44 -- -- 0.02 Max 1 7.5 0.5 3.0 -- 52.8 28.8 7.8 -- 300 600 350 300 2.6 160 -- 0.08 0.12 -- Unit mA V A V nF nF nF nC ns ns ns ns V ns C K/W K/W K/W Note 1. 2. 3. 4. 5. 6. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM600HU-12H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1200 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 1200 COLLECTOR CURRENT IC (A) VGE=20 (V) 1000 Tj=25C 15 800 600 400 200 0 14 13 VCE = 10V 1000 800 600 400 200 0 12 11 10 9 8 Tj = 25C Tj = 125C 0 4 8 12 16 20 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 IC = 240A 8 10 12 14 16 18 20 IC = 1200A IC = 600A Tj = 25C 5 VGE = 15V Tj = 25C Tj = 125C 4 3 2 1 0 0 200 400 600 800 1000 1200 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 5 CAPACITANCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) 3 2 Tj = 25C 3 VGE = 0V EMITTER CURRENT IE (A) 2 102 7 5 3 2 103 7 5 3 2 Cies 101 7 5 3 2 Coes 102 7 5 100 7 5 Cres 0.6 1.0 1.4 1.8 2.2 2.6 3.0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 3 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI IGBT MODULES CM600HU-12H HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIMES (ns) td(off) tf td(on) 5 3 2 5 3 2 3 2 lrr 102 7 5 3 2 102 7 5 3 2 trr 101 7 5 3 2 tr 101 1 10 VCC = 300V VGE = 15V RG = 1.0 Tj = 125C 2 3 5 7 103 2 3 5 7 102 101 1 10 2 3 5 7 102 2 3 5 7 103 100 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 100 Per unit base = Rth(j - c) = 0.08K/W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 100 Per unit base = Rth(j - c) = 0.12K/W 3 2 10-1 10-1 7 5 3 2 7 5 3 2 10-1 10-1 7 5 3 2 7 5 3 2 10-2 10-2 10-2 10-2 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 600A 15 VCC = 200V VCC = 300V 10 5 0 0 400 800 1200 1600 GATE CHARGE QG (nC) Feb. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 -di/dt = 1200A/s 7 7 Tj = 25C |
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